FORTHCOMING PAPERS

K.-H. I_6cherer, C. D. Brandt Determination of Non-Homogeneoas High-Concentration Depth Distributions Using Elastic Baekscattering Data M. Braun, R. Brewer, H. Stuessi, S. Vep~ek (Switzerland) A computer program m has been developed by which the depth concentration distribution of a two-element bulk sample can be determined from elasticback scattering data. The presented calculative procedure can be applied to nonhomogenous high concentrations, where the composition variation as a function of depth has to be considered to obtain correct distributions. Two samples with differnt compositions, nitrogen in titanium and gold in silicon, were analyssed with 2 MeV H* and He +ions, respectively, to illustrate the versatilityof the calculative programm.

A Simple Technique to Deposit Molybdenum Thin Films F. Okuyama (Japan) A simple technique is proposed for metallizingnonconductive objects. The technique, which is based on a plasma-induced dissociation of Mo (CO)6 molecules, is inexpensive with no sophisticated instrument needed, and allows us to deposit fine grained, adherent thin fdms of molybdenum on nourefractory substrates. It is believed that the technique possesses a variety of potential applicationsin laboratory works.

Parametric Electronics An Introduction 1982. 196 figures. XI, 328 pages. (Springer Series in Electrophysics, Volume 6) Cloth D M 79,-; approx. US $ 36.80 ISBN 3-540-10514-X

Contents: Introduction. - L u m p e d Nonlinear Reactances. - Distributed Nonlinear Reactances. - Basic Relations for Parametric Circuits. - Signal Performance of Single-Varactor Diode Parametric Circuits. - Fundamentals of Electronic Noise. - Noise Performance of Single-Varactor Diode Parametric Circuits. - Multiple Controlled-Reactance Parametric Circuits. - Applications of Parametric Circuits. - Appendix: Calculation ofpn-Diode Barrier Capacitance. - References. - List of Symbols. - Subject Index.

Electrical Properties of AgTISe2 Semiconductorin the Liquid State A. H. A bou EI Ela, AT.A bdelmohsen (EgypO The electricalconductivity and thermolectric power of AgTlSe2 have been investigated as a function of temperature from 390 ~ up to 508 ~ The experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors (Mott 1970). Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in localized states near the band edge.

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A Model of Sputtering from Spikes

Applied Physics B 27, No. 4 (1982)

M. Szymohski, A. Poradzisz (Poland)

Contributed Papers

A simple model o f sputtering from spikes is descoribed based upon the solution of a general heat conduction equation for spherical symmetry. The model accounts for many anomalies observed in energy spectra of sputtered atoms..

Y. Taira, T. Suzuki, H. Kato, N. Konishi, T. Kasuya Time Domain Measuring System of Molecular Fluorescence with Real-Time Monitor and Control of Pulsed Dye Laser 161

Supersaturated Si-As Alloy Formationby Ion Implantationand Pulsed Electron Beam Annealing A. Turos, O. Meyer, J. Geerk (F. R. Germany) Supersaturated surface alloys produced by very high dose (0.8-2.6 • 1017cm2) implantation of As-ions into silicon and subsequent pulsed electron-beam annealing have been investigated by means of the channeling technique. The maximum solubility limit of 7 x 1021As/cm3 has been determined. It exceeds the equilibrium solubility limit by more than a factor of 4 Angular scan measurements indicated that for doses above 1 • 1017 cm-2. As atoms are displaced by about 0.12 A from the regular lattice sites.

Annealing Effects and Short-Range Ordering in the Non-Magnetostrictive AmorphousAlloy Co58 Nilo Fe5 Sill BI6 X.-Z. Dong, W. Fernengel, H. Kronmaller (17.R. Germany) Effects of isothermal and isochronal annealing on the coercive field and the effective magnetic anisotropy in the as-quenched and the stress relieved amorphous alloy Co58 Nilo Fe5 Sil 1 B16 were investigated. The mechanisms of the deterioration of soft magnetic properties in non-magnetostrictiveamorphous alloys by annealing at low temperatures, Ta
C. O. Weiss, A. Godone Extension of Frequency Measurements with Schottky Diodes to the 4 THz Range 167 J. K. Fr~ckowiak,S. Prze~dzieeki A Note on Debye Potentials for Spherically Gyr0tropic Media 169 R. Wyatt, N. P. Ernsting, W. G. Wrobel Tunable Electronic Raman Laser at 161am 175 N. M. Lawandy A New Method of Measuring Ultra-Short Coherent Light Pulses 177 M. P. Irion, K. L. Kompa UV Laser Photochemistry of Acetylene at 193 nm

183

A. Vass, R. A. Wood, B.W. Davis, C. R. Pidgeon Relaxation Oscillations in cw Optically Pumped CD3OD and ~SNH3 Lasers 187 M. P. Irion, W. Furl, K.-L. Kompa UV-Laser Induced Photo-Oxidation of Aqueous Benzene Solutions: Formation of Phenol 191 T. I. Smith, J. M. J. Madey Realizable Free-Electron Lasers 195 Chung-Yee Lenng Picosecond Pulse Transmission in Germanium of Various Thicknesses 201 H. Nakata, E. Otsuka Multiehannel Time-Resolved Measurement in Far-Infrared Magnetoabsorption 207

D. K. Hamilton, T. Wilson Three-Dimensional Surface Measurement Using the Confoeal Scanning Microscope 211 A5

FORTHCOMING PAPERS (CONT'D) Depth-Selective 57 Fe M6ssbauer Spectroscopy: An Alternative P. H. Smit, R. P. van Stapel (The Netherlands) A method to obtain depth-selective 57Fe MOssbauer spectra is described. The depth selectivity by removing thin layers from a sample and measuring the conversion-electron MOssbauer spectrum. Thelayer spectra, i. e, the MOssbauer spectra associated with the removed layers, are then determined by calculating the number o f electrons which originate from each layer and reach the surface of the sample. The computations are based on Lilje-quist's theory for 57Fe conversion-electron MOssbauer spectroscopy. In this way no energydiscriminating electron spectroscopy. In this way no energy-discriminating electron spectrometers are involved, and a simple proportional counter will suffice. The depth resolution is about 20-30 rim. The method is illustrated for an ionimplantedsubstituted YIG film, in which case the magnetizationas a function of depth is obtained.

Thermal Noise in Hg0.795 Cd0.205 Te Detectors for Large Biasing Fields B. R. Nag, M. Deb Roy (India) Thermal noise in Hg0.795 Cd0.205 Te detectors is estimated for large biasing fields at a lattice temperature of 77K, by computing the correlation functions of the velocity fluctuationswith the Monte Carlo technique. The noise temperature for current components transverse to the field is almost independent of the field, but that corresponding to the parallel component increases by a factor of about 1.3 at 50 V/cm and by a factor of 3.0 at 300 V/cm. The thermal noise voltage for a detector of 85 Q resistance increases from 0.6 nV/Hz 89 at low biasing fields to about 3 nV/Hz 89at a field of 300 V/era. The noise power is also found to remain constant upto about 75 GHz, and it decreases thereafter by a factor of 0.25 for doubling of the frequency.

Temperature and Composition Dependence of the Energy Band Gap of Pbl-x Mnx S Solid Solution G. Karczewski, M. Klimkiewicz, L Glass, A. Szczerbakow (Poland), R. Behrendt (GDR) Photovoltaic p-n junctions in n-type Pbl.xMnxSx<0.04, have made been by sulphur diffusion. Current-voltage and resistance-voltage characteristics have been examined atvarionstemperatures. The spectral responses of the diodes have been measured within the temperature range from 5 to 300K at a zero bias. From these measurements the energy band gap of Pbl_xMnxS solid solution has been determined as a function of temperature and manganese content. A phenomenologicalexpression describing the variation of the energy gap of Pbl-x MnxS with temperature and alloy composition has been proposed.

A GaAs MISFET With Ge3 N4 Gate Dielectric K. P. Pande, C. C. Shen (USA) GaAs MIS field effect transistorswith a Ge3 N4 dielectric gate have been investigated. No hysteresis loop and drain current drift has been observed in the ID-VD characteristics. However,performanceofthedevieeshavebeenfound to be limited by the contact resistance. From I~s-V G plot, the threshold voltageand effective channel mobility of the transistor have been obtained as -4.5 V and 2800 cm2vlsl, respectively. A maximum dc transconductance of 68 mS/mm of gate width has been achieved.

Lattices S. Califano, V. Schettino, N. N e t o

Lattice Dynamics of Molecular Crystals 1981. VI, 309 pages (Lecture Notes in Chemistry, Volume 26) DM 52,50; approx. US $ 22.40 ISBN 3-540-10868-8

Contents: Lattice Dynamics. - Symmetry. - I n t e r m o l e c u l a r Potentials. "- A n h a r m o n i c Interactions. - T w o - P h o n o n Spectra o f M o l e c u l a r Crystals. - Infrared and R a m a n Intensities in M o l e c u l a r Crystals. B. D o m e r

Coherent Inelastic Neutron Scattering in LaNce Dynamics 1982.47 figures. VIII, 96 pages (Springer Tracts in Modern Physics, Volume 93) Cloth DM 44,-, approx. US $ 20.50 ISBN 3-540-11049-6

Contents: Introduction. - E x p e r i m e n t a l T e c h n i q u e with Three-Axis Spectrometers. - T h e Scattering F u n c t i o n and S y m m e t r y Operations in the Crystal. - Lattice D y n a m i c a l Models. - Analysis o f P h o n o n Intensities. - Analysis o f P h o n o n Line Shapes. - Final Remarks. - References. Subject Index. M. T o d a

Theory of Nonlinear Lattices 1981.38 figures. X, 205 pages (Springer Series in Solid-State Sciences, Volume 20) Cloth DM 69,-; approx. US $ 32.20 ISBN 3-540-10224-8

Contents: Introduction. - T h e Lattice with Exponential Interaction. - T h e S p e c t r u m and Construction o f Solutions. Periodic Systems. - Application of the H a m i l t o n - J a c o b i Theory. - Appendices A - J . - Simplified Answers to M a i n Problems. - References. - Bibliography. - Subject Index. List o f A u t h o r s Cited in Text.

Growth Kinetics of Si-Molecular Beam Epitaxy E. Kasper (F. R. Germany) Growth mode, surface morphology, crystal perfection and growth rate of silicon-molecular beam epitaxy films were observed as function of temperature (450 ~ ~ silicon flux density (8 x 1014cm2/s- - 8 x 1015cm2/s)and surface orientation (111, 110, 100). Within the varied parameters growth proceeds by two-dimensional growth mode via the lateralmotion of atomic steps originating from the slight misorientation of commercially available sustrates (typically 0.25 ~ Single crystalline films with high lattice perfection and smooth surfaces result from this growth mode. The growth rateqinearly dependent on Si-flux density and independant of temperature and orientation-indicates a condensation coefficient near unity. An atomic step flowmodel on the basis of the BurtonCabera-Frank theory explains this behaviour by mobile adatoms with low activation energy of diffusion. A6

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