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(Continued from front side.) since integration means that the devices will likely be exposed to a number of processing steps, there are both scientific and technological issues to be addressed before nanostructures are used in the visible-light electro-optical chips of the future. Accordingly, the authors fabricated nanostructures (e.g., dots and wires) down to 30 nm diameters and 60 nm widths in ZnTe/GaAs, ZnSe/GaAs, and CdTe-CdMnTe. Their results showed minimal fabrication damage. Another session on light emitters (Silicon Photonics), opened with the invited presentation "Nanocrystalline Semiconductor (Quantum Dot) Materials for Photonics and Optoelectronics: Synthesis, Processing, and Characterization," by K.D. Kolenbrander of the Massachusetts Institute of Technology. In the presentation, Kolenbrander described several novel approaches to the synthesis and processing of unique nanocrystalline semiconductor/host composite materials. A common goal of the approaches, according to the author, is to develop high-performance materials platforms for integrated photonic and optoelectronic
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structures. Kolenbrander presented photoluminescence data from nanocrystalline silicon materials and compared it with luminescence data from a variety of porous silicon systems. Other sessions during the conference covered highly mismatched III-V materials; contacts and metallization; epitaxy for devices; 111-V superlattices and quantum wells; SiGe electrical and photonic properties; characterization of structural, optical, and electrical properties; novel optical materials; rare-earth doping for photonics; metalorganic chemical vapor deposition and novel growth processes; group IV oxides and applications; SiGe relaxation; materials for infrared detectors; epitaxy of dissimilar materials; 111-V MBE and metalorganic MBE; group IV epitaxy; low-temperature processing; low-temperature grown III-V materials; and dilute magnetic semiconductors and magnetic thin films. As usual, several social events were available to the participants. This year's attractions included a catered dinner for attendees and guests at the Santa Barbara Zoological Gardens. The animals were left out for the evening and a min-
iature train circled the zoo, providing views of the Pacific Ocean and the mountains. In addition, attendees staying on campus could take advantage of the university's recreation facilities and the university beach. Next year's EMC will be held in Boulder, Colorado, June 22-24. For more information, contact the TMS Meetings Department at 420 Commonwealth Drive, Warrendale, Pennsylvania 15086; telephone (412) 776-9050; fax (412) 776-
3770.
Division-Level Newsletter Coordinators Extraction & Processing Division Mark Schlesinger. University of Missouri at Rolla
Light Metals Division
Wayne Hale. Anglesey Aluminium
Structural Materials Division Ram B. Bhagat. Pennsylvania State University
Electronic, Magnetic & Photonic Materials Division To be announced
Materials Design & Manufacturing Division
Paul Follansbee, Los Alamos National Lab